The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires

Research output: Contribution to journalJournal articleResearchpeer-review

Original languageEnglish
Article number1900134
JournalPhysica Status Solidi - Rapid Research Letters
Issue number8
Number of pages8
Publication statusPublished - 2 Aug 2019

Bibliographical note


    Research areas

  • band structure, bending deformation, charge transport, GaAs nanowires, strain engineering

ID: 226305461