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The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires. / Zeng, Lunjie; Kanne, Thomas; Nygard, Jesper; Krogstrup, Peter; Jaeger, Wolfgang; Olsson, Eva.
In:
Physica Status Solidi - Rapid Research Letters, Vol. 13, No. 8, 1900134, 02.08.2019.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Zeng, L
, Kanne, T, Nygard, J, Krogstrup, P, Jaeger, W & Olsson, E 2019, '
The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires',
Physica Status Solidi - Rapid Research Letters, vol. 13, no. 8, 1900134.
https://doi.org/10.1002/pssr.201900134APA
Zeng, L.
, Kanne, T., Nygard, J., Krogstrup, P., Jaeger, W., & Olsson, E. (2019).
The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires.
Physica Status Solidi - Rapid Research Letters,
13(8), [1900134].
https://doi.org/10.1002/pssr.201900134Vancouver
Zeng L
, Kanne T, Nygard J, Krogstrup P, Jaeger W, Olsson E.
The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires.
Physica Status Solidi - Rapid Research Letters. 2019 Aug 2;13(8). 1900134.
https://doi.org/10.1002/pssr.201900134Author
Zeng, Lunjie ; Kanne, Thomas ; Nygard, Jesper ; Krogstrup, Peter ; Jaeger, Wolfgang ; Olsson, Eva. / The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires. In: Physica Status Solidi - Rapid Research Letters. 2019 ; Vol. 13, No. 8.
Bibtex
@article{57887d69e1254b5096151f0e7d6232a1,
title = "The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires",
keywords = "band structure, bending deformation, charge transport, GaAs nanowires, strain engineering",
author = "Lunjie Zeng and Thomas Kanne and Jesper Nygard and Peter Krogstrup and Wolfgang Jaeger and Eva Olsson",
note = "[Qdev]",
year = "2019",
month = aug,
day = "2",
doi = "10.1002/pssr.201900134",
language = "English",
volume = "13",
journal = "Physica Status Solidi - Rapid Research Letters",
issn = "1862-6254",
publisher = "Wiley-VCH",
number = "8",
}
RIS
TY - JOUR
T1 - The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires
AU - Zeng, Lunjie
AU - Kanne, Thomas
AU - Nygard, Jesper
AU - Krogstrup, Peter
AU - Jaeger, Wolfgang
AU - Olsson, Eva
N1 - [Qdev]
PY - 2019/8/2
Y1 - 2019/8/2
KW - band structure
KW - bending deformation
KW - charge transport
KW - GaAs nanowires
KW - strain engineering
U2 - 10.1002/pssr.201900134
DO - 10.1002/pssr.201900134
M3 - Journal article
VL - 13
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
M1 - 1900134
ER -
