Jesper Nygård

Jesper Nygård

Professor

ORCID: 0000-0002-4639-5314

Introductory remarks on publicationslist

Only publications after 1998 are shown here, 1993-1997 is missing

Complete list: ResearcherID: http://www.researcherid.com/rid/F-5113-2014


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  1. Published

    Scalable Platform for Nanocrystal-Based Quantum Electronics

    Sestoft, Joachim Elbeshausen, Gejl, A. N., Kanne, Thomas, Schlosser, R. D., Ross, D., Kjær, D., Grove-Rasmussen, Kasper & Nygård, Jesper, 21 Apr 2022, In: Advanced Functional Materials. 32, 28, 10 p., 2112941.

    Research output: Contribution to journal › Journal article › Research › peer-review

  2. Published

    Normal, superconducting and topological regimes of hybrid double quantum dots

    Sherman, D., Yodh, J. S., Albrecht, S. M., Nygård, Jesper, Krogstrup, Peter & Marcus, Charles M., 2 Mar 2017, In: Nature Nanotechnology. 12, p. 212-217

    Research output: Contribution to journal › Journal article › Research › peer-review

  3. Published

    Current-phase relations of few-mode InAs nanowire Josephson junctions

    Spanton, E. M., Deng, M., Vaitiekenas, Saulius, Krogstrup, Peter, Nygård, Jesper, Marcus, Charles M. & Moler, K. A., 14 Aug 2017, In: Nature Physics. 13, 12, p. 1177-1181

    Research output: Contribution to journal › Journal article › Research › peer-review

  4. Published

    Direct transport between superconducting subgap states in a double quantum dot

    Steffensen, G. O., Saldana, J. C. E., Vekris, A., Krogstrup, Peter, Grove-Rasmussen, Kasper, Nygård, Jesper, Yeyati, A. L. & Paaske, Jens, 15 Apr 2022, In: Physical Review B. 105, 16, 6 p., 161302.

    Research output: Contribution to journal › Journal article › Research › peer-review

  5. Published

    Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy

    Stobbe, S., Lindelof, Poul Erik & Nygård, Jesper, 17 Oct 2006, In: Semiconductor Science and Technology. 21, 11, p. S10-S16

    Research output: Contribution to journal › Journal article › Research › peer-review

  6. Published

    Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

    Sørensen, B. S., Aagesen, M., Sørensen, Claus Birger, Lindelof, Poul Erik, Martinez, Karen Laurence & Nygård, Jesper, 2008, In: Applied Physics Letters. 92, 1, p. 012119

    Research output: Contribution to journal › Journal article › Research › peer-review

  7. Published

    Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation

    Tanta, R., Madsen, M. H., Liao, Z., Krogstrup, Peter, Vosch, Tom, Nygård, Jesper & Jespersen, T. S., 14 Dec 2015, In: Applied Physics Letters. 107, 24, 4 p., 243101.

    Research output: Contribution to journal › Journal article › Research › peer-review

  8. Published

    Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

    Tanta, R., Lindberg, C., Lehmann, S., Bolinsson, J., Carro-Temboury, M. R., Dick, K. A., Vosch, Tom, Jespersen, T. S. & Nygård, Jesper, 19 Oct 2017, In: Physical Review B. 96, 16, 7 p., 165433.

    Research output: Contribution to journal › Journal article › Research › peer-review

  9. Published

    Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy

    Tanta, R., Kanne, Thomas, Amaduzzi, F., Liao, Z., Madsen, M. H., Alarcón-Lladó, E., Krogstrup, Peter, Johnson, Erik, Morral, A. F. I., Vosch, Tom, Nygård, Jesper & Jespersen, T. S., 2016, In: Nanotechnology. 27, 30, 9 p., 305704.

    Research output: Contribution to journal › Journal article › Research › peer-review

  10. Published

    InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers

    Taupin, M., Mannila, E., Krogstrup, Peter, Nguyen, Q. H., Albrecht, S. M., Nygård, Jesper, Marcus, Charles M. & Pekola, J. P., 28 Nov 2016, In: Physical Review Applied. 6, 7 p., 054017.

    Research output: Contribution to journal › Journal article › Research › peer-review

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ID: 12744