InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
Research output: Contribution to journal › Journal article › peer-review
| Original language | English |
|---|---|
| Article number | 054017 |
| Journal | Physical Review Applied |
| Volume | 6 |
| Number of pages | 7 |
| ISSN | 2331-7019 |
| DOIs | |
| Publication status | Published - 28 Nov 2016 |
Bibliographical note
[Qdev]
ID: 167180961