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InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers. / Taupin, Mathieu; Mannila, Elsa; Krogstrup, Peter; Nguyen, Quoc Hung; Albrecht, Sven Marian; Nygård, Jesper; Marcus, Charles M.; Pekola, Jukka P.
In:
Physical Review Applied, Vol. 6, 054017, 28.11.2016.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Taupin, M, Mannila, E
, Krogstrup, P, Nguyen, QH, Albrecht, SM
, Nygård, J, Marcus, CM & Pekola, JP 2016, '
InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers',
Physical Review Applied, vol. 6, 054017.
https://doi.org/10.1103/PhysRevApplied.6.054017APA
Taupin, M., Mannila, E.
, Krogstrup, P., Nguyen, Q. H., Albrecht, S. M.
, Nygård, J., Marcus, C. M., & Pekola, J. P. (2016).
InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers.
Physical Review Applied,
6, [054017].
https://doi.org/10.1103/PhysRevApplied.6.054017Vancouver
Taupin M, Mannila E
, Krogstrup P, Nguyen QH, Albrecht SM
, Nygård J et al.
InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers.
Physical Review Applied. 2016 Nov 28;6. 054017.
https://doi.org/10.1103/PhysRevApplied.6.054017Author
Taupin, Mathieu ; Mannila, Elsa ; Krogstrup, Peter ; Nguyen, Quoc Hung ; Albrecht, Sven Marian ; Nygård, Jesper ; Marcus, Charles M. ; Pekola, Jukka P. / InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers. In: Physical Review Applied. 2016 ; Vol. 6.
Bibtex
@article{a5c1d33844bc40a29f75276705c1dc80,
title = "InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers",
author = "Mathieu Taupin and Elsa Mannila and Peter Krogstrup and Nguyen, {Quoc Hung} and Albrecht, {Sven Marian} and Jesper Nyg{\aa}rd and Marcus, {Charles M.} and Pekola, {Jukka P.}",
note = "[Qdev]",
year = "2016",
month = nov,
day = "28",
doi = "10.1103/PhysRevApplied.6.054017",
language = "English",
volume = "6",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
}
RIS
TY - JOUR
T1 - InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers
AU - Taupin, Mathieu
AU - Mannila, Elsa
AU - Krogstrup, Peter
AU - Nguyen, Quoc Hung
AU - Albrecht, Sven Marian
AU - Nygård, Jesper
AU - Marcus, Charles M.
AU - Pekola, Jukka P.
N1 - [Qdev]
PY - 2016/11/28
Y1 - 2016/11/28
U2 - 10.1103/PhysRevApplied.6.054017
DO - 10.1103/PhysRevApplied.6.054017
M3 - Journal article
VL - 6
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
M1 - 054017
ER -
