Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012
Research output: Other contribution › Research
Documents
- The XXXIII Annual Meeting
Submitted manuscript, 376 KB, PDF document
Original language | English |
---|---|
Publication date | 2 Jul 2012 |
Place of Publication | Bangalore, India |
Publication status | Published - 2 Jul 2012 |
Number of downloads are based on statistics from Google Scholar and www.ku.dk
No data available
ID: 41843037