Atomic structure of GaAs nanowires and InAs/GaAs graded interfaces in nanowires grown under VLS conditions The XXXIII Annual Meeting of the Electron Microscopy Society of India, Bangalore -2012
Research output: Other contribution › Research
Documents
- The XXXIII Annual Meeting
Submitted manuscript, 376 KB, PDF document
| Original language | English |
|---|---|
| Publication date | 2 Jul 2012 |
| Place of Publication | Bangalore, India |
| Publication status | Published - 2 Jul 2012 |
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ID: 41843037