Vibrational sidebands and dissipative tunneling in molecular transistors

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Vibrational sidebands and dissipative tunneling in molecular transistors. / Braig, S.; Flensberg, Karsten.

In: Physical Review B. Condensed Matter and Materials Physics, Vol. 68, 2003, p. 205324.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Braig, S & Flensberg, K 2003, 'Vibrational sidebands and dissipative tunneling in molecular transistors', Physical Review B. Condensed Matter and Materials Physics, vol. 68, pp. 205324.

APA

Braig, S., & Flensberg, K. (2003). Vibrational sidebands and dissipative tunneling in molecular transistors. Physical Review B. Condensed Matter and Materials Physics, 68, 205324.

Vancouver

Braig S, Flensberg K. Vibrational sidebands and dissipative tunneling in molecular transistors. Physical Review B. Condensed Matter and Materials Physics. 2003;68:205324.

Author

Braig, S. ; Flensberg, Karsten. / Vibrational sidebands and dissipative tunneling in molecular transistors. In: Physical Review B. Condensed Matter and Materials Physics. 2003 ; Vol. 68. pp. 205324.

Bibtex

@article{79bb947074c411dbbee902004c4f4f50,
title = "Vibrational sidebands and dissipative tunneling in molecular transistors",
author = "S. Braig and Karsten Flensberg",
year = "2003",
language = "English",
volume = "68",
pages = "205324",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Vibrational sidebands and dissipative tunneling in molecular transistors

AU - Braig, S.

AU - Flensberg, Karsten

PY - 2003

Y1 - 2003

M3 - Journal article

VL - 68

SP - 205324

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

ER -

ID: 114011