Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions
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Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions. / Carrad, Damon James; Stampfer, Lukas; Olsteins, Dags; Petersen, Christian Emmanuel Noes; Khan, Sabbir A. .; Krogstrup, Peter; Jespersen, Thomas Sand.
In: Nano Letters, Vol. 22, No. 15, 21.07.2022, p. 6262-6267.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions
AU - Carrad, Damon James
AU - Stampfer, Lukas
AU - Olsteins, Dags
AU - Petersen, Christian Emmanuel Noes
AU - Khan, Sabbir A. .
AU - Krogstrup, Peter
AU - Jespersen, Thomas Sand
PY - 2022/7/21
Y1 - 2022/7/21
N2 - Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.
AB - Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.
KW - semiconductor/superconductor hybrids
KW - nanowires
KW - multiple Andreev reflections
KW - photon-assisted tunneling
KW - Tien-Gordon
KW - ENERGY-GAP STRUCTURE
KW - SHOT-NOISE
KW - CHARGE
KW - SUPERCURRENT
KW - GROWTH
KW - STATE
U2 - 10.1021/acs.nanolett.2c01840
DO - 10.1021/acs.nanolett.2c01840
M3 - Journal article
C2 - 35862144
VL - 22
SP - 6262
EP - 6267
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 15
ER -
ID: 315528918