Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

  • L. Hutin
  • B. Bertrand
  • E. Chanrion
  • H. Bohuslavskyi
  • F. Ansaloni
  • T. Y. Yang
  • J. Michniewicz
  • D. J. Niegemann
  • C. Spence
  • T. Lundberg
  • A. Crippa
  • J. Li
  • R. Maurand
  • X. Jehl
  • M. Sanquer
  • M. F. Gonzalez-Zalba
  • Y. M. Niquet
  • S. De Franceschi
  • M. Urdampilleta
  • T. Meunier
  • M. Vinet

We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

Original languageEnglish
Title of host publication2019 IEEE International Electron Devices Meeting, IEDM 2019
Publication date2019
Article number8993580
ISBN (Electronic)9781728140315
Publication statusPublished - 2019
Event65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
Duration: 7 Dec 201911 Dec 2019


Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
LandUnited States
BySan Francisco
SponsorIEEE Electron Devices Society (EDS)
SeriesTechnical Digest - International Electron Devices Meeting, IEDM


ID: 241595963