TY - JOUR

T1 - Doubling the mobility of InAs/InGaAs selective area grown nanowires

AU - Beznasiuk, Daria

AU - Marti-Sanchez, Sara

AU - Kang, Jung-Hyun

AU - Tanta, Rawa

AU - Stankevic, Tomas

AU - Rajpalke, Mohana

AU - Christensen, Anna Wulff

AU - Spadaro, Maria Chiara

AU - Bergamaschini, Roberto

AU - Maka, Nikhil N.

AU - Petersen, Christian Emanuel N.

AU - Carrad, Damon J.

AU - Jespersen, Thomas Sand

AU - Arbiol, Jordi

AU - Krogstrup, Peter

PY - 2022/3/16

Y1 - 2022/3/16

N2 - Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

AB - Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

KW - MOLECULAR-BEAM EPITAXY

KW - ELECTRONIC-PROPERTIES

KW - ALLOY SCATTERING

KW - GAAS

KW - DESORPTION

KW - OXIDE

KW - SEGREGATION

KW - SUBSTRATE

KW - SURFACES

KW - GE

U2 - 10.1103/PhysRevMaterials.6.034602

DO - 10.1103/PhysRevMaterials.6.034602

M3 - Journal article

VL - 6

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 3

M1 - 034602

ER -