Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces
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Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces. / Schuwalow, Sergej; Schroter, Niels B. M.; Gukelberger, Jan; Thomas, Candice; Strocov, Vladimir; Gamble, John; Chikina, Alla; Caputo, Marco; Krieger, Jonas; Gardner, Geoffrey C.; Troyer, Matthias; Aeppli, Gabriel; Manfra, Michael J.; Krogstrup, Peter.
In: Advanced Science, Vol. 9, No. 14, 2003087, 2021.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Band Structure Extraction at Hybrid Narrow-Gap Semiconductor-Metal Interfaces
AU - Schuwalow, Sergej
AU - Schroter, Niels B. M.
AU - Gukelberger, Jan
AU - Thomas, Candice
AU - Strocov, Vladimir
AU - Gamble, John
AU - Chikina, Alla
AU - Caputo, Marco
AU - Krieger, Jonas
AU - Gardner, Geoffrey C.
AU - Troyer, Matthias
AU - Aeppli, Gabriel
AU - Manfra, Michael J.
AU - Krogstrup, Peter
PY - 2021
Y1 - 2021
N2 - The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.
AB - The design of epitaxial semiconductor-superconductor and semiconductor-metal quantum devices requires a detailed understanding of the interfacial electronic band structure. However, the band alignment of buried interfaces is difficult to predict theoretically and to measure experimentally. This work presents a procedure that allows to reliably determine critical parameters for engineering quantum devices; band offset, band bending profile, and number of occupied quantum well subbands of interfacial accumulation layers at semiconductor-metal interfaces. Soft X-ray angle-resolved photoemission is used to directly measure the quantum well states as well as valence bands and core levels for the InAs(100)/Al interface, an important platform for Majorana-zero-mode based topological qubits, and demonstrate that the fabrication process strongly influences the band offset, which in turn controls the topological phase diagrams. Since the method is transferable to other narrow gap semiconductors, it can be used more generally for engineering semiconductor-metal and semiconductor-superconductor interfaces in gate-tunable superconducting devices.
KW - angle‐
KW - resolved photoelectron spectroscopy
KW - Hybrid interfaces
KW - Majorana zero modes
KW - quantum devices
KW - semiconductors
KW - topological superconductors
KW - SCHOTTKY-BARRIER
KW - VALENCE-BAND
KW - CORE LEVELS
KW - LEVEL
KW - STATES
KW - SHIFT
U2 - 10.1002/advs.202003087
DO - 10.1002/advs.202003087
M3 - Journal article
C2 - 33643798
VL - 9
JO - Advanced Science
JF - Advanced Science
SN - 2198-3844
IS - 14
M1 - 2003087
ER -
ID: 255159373