Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

Research output: Contribution to journal › Letter › Research › peer-review

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Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. / Holmer, Jonatan; Zeng, Lunjie; Kanne, Thomas; Krogstrup, Peter; Nygard, Jesper; Olsson, Eva.

In: Nano Letters, Vol. 21, No. 21, 10.11.2021, p. 9038-9043.

Research output: Contribution to journal › Letter › Research › peer-review

Harvard

Holmer, J, Zeng, L, Kanne, T, Krogstrup, P, Nygard, J & Olsson, E 2021, 'Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain', Nano Letters, vol. 21, no. 21, pp. 9038-9043. https://doi.org/10.1021/acs.nanolett.1c02468

APA

Holmer, J., Zeng, L., Kanne, T., Krogstrup, P., Nygard, J., & Olsson, E. (2021). Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. Nano Letters, 21(21), 9038-9043. https://doi.org/10.1021/acs.nanolett.1c02468

Vancouver

Holmer J, Zeng L, Kanne T, Krogstrup P, Nygard J, Olsson E. Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. Nano Letters. 2021 Nov 10;21(21):9038-9043. https://doi.org/10.1021/acs.nanolett.1c02468

Author

Holmer, Jonatan ; Zeng, Lunjie ; Kanne, Thomas ; Krogstrup, Peter ; Nygard, Jesper ; Olsson, Eva. / Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain. In: Nano Letters. 2021 ; Vol. 21, No. 21. pp. 9038-9043.

Bibtex

@article{3952640c062c40bf884f3ec70ddc62ba,

title = "Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain",

abstract = "III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.",

keywords = "III-V nanowires, solar cells, strain, I-V characteristics, photocurrent, EBIC, SOLAR-CELLS, EFFICIENCY ENHANCEMENT, ABSORPTION, INP",

author = "Jonatan Holmer and Lunjie Zeng and Thomas Kanne and Peter Krogstrup and Jesper Nygard and Eva Olsson",

year = "2021",

month = nov,

day = "10",

doi = "10.1021/acs.nanolett.1c02468",

language = "English",

volume = "21",

pages = "9038--9043",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "21",

}

RIS

TY - JOUR

T1 - Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

AU - Holmer, Jonatan

AU - Zeng, Lunjie

AU - Kanne, Thomas

AU - Krogstrup, Peter

AU - Nygard, Jesper

AU - Olsson, Eva

PY - 2021/11/10

Y1 - 2021/11/10

N2 - III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.

AB - III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.

KW - III-V nanowires

KW - solar cells

KW - strain

KW - I-V characteristics

KW - photocurrent

KW - EBIC

KW - SOLAR-CELLS

KW - EFFICIENCY ENHANCEMENT

KW - ABSORPTION

KW - INP

U2 - 10.1021/acs.nanolett.1c02468

DO - 10.1021/acs.nanolett.1c02468

M3 - Letter

C2 - 34704766

VL - 21

SP - 9038

EP - 9043

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 21

ER -

ID: 285719327