Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
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Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces : Band Alignment and Magnetic Structure. / Liu, Yu; Luchini, Alessandra; Marti-Sanchez, Sara; Koch, Christian; Schuwalow, Sergej; Khan, Sabbir A.; Stankevic, Tomas; Francoual, Sonia; Mardegan, Jose R. L.; Krieger, Jonas A.; Strocov, Vladimir N.; Stahn, Jochen; Vaz, Carlos A. F.; Ramakrishnan, Mahesh; Staub, Urs; Lefmann, Kim; Aeppli, Gabriel; Arbiol, Jordi; Krogstrup, Peter.
I: A C S Applied Materials and Interfaces, Bind 12, Nr. 7, 19.02.2020, s. 8780-8787.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces
T2 - Band Alignment and Magnetic Structure
AU - Liu, Yu
AU - Luchini, Alessandra
AU - Marti-Sanchez, Sara
AU - Koch, Christian
AU - Schuwalow, Sergej
AU - Khan, Sabbir A.
AU - Stankevic, Tomas
AU - Francoual, Sonia
AU - Mardegan, Jose R. L.
AU - Krieger, Jonas A.
AU - Strocov, Vladimir N.
AU - Stahn, Jochen
AU - Vaz, Carlos A. F.
AU - Ramakrishnan, Mahesh
AU - Staub, Urs
AU - Lefmann, Kim
AU - Aeppli, Gabriel
AU - Arbiol, Jordi
AU - Krogstrup, Peter
PY - 2020/2/19
Y1 - 2020/2/19
N2 - Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.
AB - Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.
KW - quantum computing
KW - proximity effects
KW - MBE
KW - hybrid materials
KW - magnetic proximity
KW - exchange field
KW - band alignment
KW - EUS
KW - SUPERCONDUCTOR
KW - DIFFRACTION
KW - BEAMLINE
KW - FIELD
KW - POLARIZATION
KW - PRINCIPLES
KW - SCATTERING
KW - ADRESS
KW - GROWTH
U2 - 10.1021/acsami.9b15034
DO - 10.1021/acsami.9b15034
M3 - Journal article
C2 - 31877013
VL - 12
SP - 8780
EP - 8787
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 7
ER -
ID: 248026464