Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements

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Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements. / Garcia-Fernandez, Pedro David; Javadi, Alisa; Nielsen, Henri Thyrrestrup; Lodahl, Peter.

In: Applied Physics Letters, Vol. 102 , 031101, 22.01.2013.

Research output: Contribution to journalJournal articleResearchpeer-review

Harvard

Garcia-Fernandez, PD, Javadi, A, Nielsen, HT & Lodahl, P 2013, 'Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements', Applied Physics Letters, vol. 102 , 031101. https://doi.org/10.1063/1.4788709

APA

Garcia-Fernandez, P. D., Javadi, A., Nielsen, H. T., & Lodahl, P. (2013). Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements. Applied Physics Letters, 102 , [031101]. https://doi.org/10.1063/1.4788709

Vancouver

Garcia-Fernandez PD, Javadi A, Nielsen HT, Lodahl P. Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements. Applied Physics Letters. 2013 Jan 22;102 . 031101. https://doi.org/10.1063/1.4788709

Author

Garcia-Fernandez, Pedro David ; Javadi, Alisa ; Nielsen, Henri Thyrrestrup ; Lodahl, Peter. / Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements. In: Applied Physics Letters. 2013 ; Vol. 102 .

Bibtex

@article{484764b4819a41d88439386af1f5930f,
title = "Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements",
abstract = "Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-fieldmeasurements of the Anderson-localized modes. This is achieved by comparing the spectral range where Anderson localization is observed to numerical simulations, and the method offers sensitivity down to 1nm.",
author = "Garcia-Fernandez, {Pedro David} and Alisa Javadi and Nielsen, {Henri Thyrrestrup} and Peter Lodahl",
year = "2013",
month = "1",
day = "22",
doi = "10.1063/1.4788709",
language = "English",
volume = "102",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",

}

RIS

TY - JOUR

T1 - Quantifying the intrinsic amount of fabrication disorder in photonic-crystal waveguides from optical far-field intensity measurements

AU - Garcia-Fernandez, Pedro David

AU - Javadi, Alisa

AU - Nielsen, Henri Thyrrestrup

AU - Lodahl, Peter

PY - 2013/1/22

Y1 - 2013/1/22

N2 - Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-fieldmeasurements of the Anderson-localized modes. This is achieved by comparing the spectral range where Anderson localization is observed to numerical simulations, and the method offers sensitivity down to 1nm.

AB - Residual disorder due to fabrication imperfections has important impact in nanophotonics where it may degrade device performance by increasing radiation loss or spontaneously trap light by Anderson localization. We propose and demonstrate experimentally a method of quantifying the intrinsic amount of disorder in state-of-the-art photonic-crystal waveguides from far-fieldmeasurements of the Anderson-localized modes. This is achieved by comparing the spectral range where Anderson localization is observed to numerical simulations, and the method offers sensitivity down to 1nm.

U2 - 10.1063/1.4788709

DO - 10.1063/1.4788709

M3 - Journal article

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 031101

ER -

ID: 94627443