p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

Research output: Contribution to journalJournal articlepeer-review

Standard

p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. / Ullah, A. R.; Meyer, F.; Gluschke, J. G.; Naureen, S.; Caroff, P.; Krogstrup, P.; Nygard, J.; Micolich, A. P.

In: Nano Letters, Vol. 18, No. 9, 01.09.2018, p. 5673-5680.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Ullah, AR, Meyer, F, Gluschke, JG, Naureen, S, Caroff, P, Krogstrup, P, Nygard, J & Micolich, AP 2018, 'p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating', Nano Letters, vol. 18, no. 9, pp. 5673-5680. https://doi.org/10.1021/acs.nanolett.8b02249

APA

Ullah, A. R., Meyer, F., Gluschke, J. G., Naureen, S., Caroff, P., Krogstrup, P., Nygard, J., & Micolich, A. P. (2018). p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. Nano Letters, 18(9), 5673-5680. https://doi.org/10.1021/acs.nanolett.8b02249

Vancouver

Ullah AR, Meyer F, Gluschke JG, Naureen S, Caroff P, Krogstrup P et al. p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. Nano Letters. 2018 Sep 1;18(9):5673-5680. https://doi.org/10.1021/acs.nanolett.8b02249

Author

Ullah, A. R. ; Meyer, F. ; Gluschke, J. G. ; Naureen, S. ; Caroff, P. ; Krogstrup, P. ; Nygard, J. ; Micolich, A. P. / p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. In: Nano Letters. 2018 ; Vol. 18, No. 9. pp. 5673-5680.

Bibtex

@article{76424669526740658a503f2ceb388c0d,
title = "p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating",
keywords = "Nanowire, transistor, MESFET, Schottky gate, p-GaAs",
author = "Ullah, {A. R.} and F. Meyer and Gluschke, {J. G.} and S. Naureen and P. Caroff and P. Krogstrup and J. Nygard and Micolich, {A. P.}",
note = "[Qdev]",
year = "2018",
month = sep,
day = "1",
doi = "10.1021/acs.nanolett.8b02249",
language = "English",
volume = "18",
pages = "5673--5680",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "9",

}

RIS

TY - JOUR

T1 - p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating

AU - Ullah, A. R.

AU - Meyer, F.

AU - Gluschke, J. G.

AU - Naureen, S.

AU - Caroff, P.

AU - Krogstrup, P.

AU - Nygard, J.

AU - Micolich, A. P.

N1 - [Qdev]

PY - 2018/9/1

Y1 - 2018/9/1

KW - Nanowire

KW - transistor

KW - MESFET

KW - Schottky gate

KW - p-GaAs

U2 - 10.1021/acs.nanolett.8b02249

DO - 10.1021/acs.nanolett.8b02249

M3 - Journal article

VL - 18

SP - 5673

EP - 5680

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -

ID: 203331830