Low temperature transport in p-doped InAs nanowires

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We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.
Original languageEnglish
Article number162104
JournalApplied Physics Letters
Issue number16
Number of pages6
Publication statusPublished - 1 Oct 2013

ID: 92233444