Hole spin coherence in a Ge/Si heterostructure nanowire
Research output: Contribution to journal › Journal article › Research › peer-review
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
|Number of pages||4|
|Publication status||Published - 5 May 2014|
Preprint available at http://arxiv.org/abs/1403.2093.