Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands

Research output: Contribution to journal › Journal article › Research › peer-review

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Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands. / Vaitiekėnas, S.; Souto, R. Seoane; Liu, Y.; Krogstrup, P.; Flensberg, K.; Leijnse, M.; Marcus, C. M.

In: Physical Review B, Vol. 105, No. 4, L041304, 31.01.2022.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Vaitiekėnas, S, Souto, RS, Liu, Y, Krogstrup, P, Flensberg, K, Leijnse, M & Marcus, CM 2022, 'Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands', Physical Review B, vol. 105, no. 4, L041304. https://doi.org/10.1103/PhysRevB.105.L041304

APA

Vaitiekėnas, S., Souto, R. S., Liu, Y., Krogstrup, P., Flensberg, K., Leijnse, M., & Marcus, C. M. (2022). Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands. Physical Review B, 105(4), [L041304]. https://doi.org/10.1103/PhysRevB.105.L041304

Vancouver

Vaitiekėnas S, Souto RS, Liu Y, Krogstrup P, Flensberg K, Leijnse M et al. Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands. Physical Review B. 2022 Jan 31;105(4). L041304. https://doi.org/10.1103/PhysRevB.105.L041304

Author

Vaitiekėnas, S. ; Souto, R. Seoane ; Liu, Y. ; Krogstrup, P. ; Flensberg, K. ; Leijnse, M. ; Marcus, C. M. / Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands. In: Physical Review B. 2022 ; Vol. 105, No. 4.

Bibtex

@article{af359c12e66b4d3cb7651ca32e9e02ca,

title = "Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands",

abstract = "We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.",

author = "S. Vaitiekėnas and Souto, {R. Seoane} and Y. Liu and P. Krogstrup and K. Flensberg and M. Leijnse and Marcus, {C. M.}",

note = "Publisher Copyright: {\textcopyright} 2022 American Physical Society.",

year = "2022",

month = jan,

day = "31",

doi = "10.1103/PhysRevB.105.L041304",

language = "English",

volume = "105",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "4",

}

RIS

TY - JOUR

T1 - Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands

AU - Vaitiekėnas, S.

AU - Souto, R. Seoane

AU - Liu, Y.

AU - Krogstrup, P.

AU - Flensberg, K.

AU - Leijnse, M.

AU - Marcus, C. M.

PY - 2022/1/31

Y1 - 2022/1/31

N2 - We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.

AB - We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.

U2 - 10.1103/PhysRevB.105.L041304

DO - 10.1103/PhysRevB.105.L041304

M3 - Journal article

AN - SCOPUS:85124212007

VL - 105

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 4

M1 - L041304

ER -

ID: 307294532