Electronic properties of InAs/EuS/Al hybrid nanowires

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Electronic properties of InAs/EuS/Al hybrid nanowires. / Liu, Chun-Xiao; Schuwalow, Sergej; Liu, Yu; Vilkelis, Kostas; Manesco, A. L. R.; Krogstrup, P.; Wimmer, Michael.

In: Physical Review B, Vol. 104, No. 1, 014516, 22.07.2021.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Liu, C-X, Schuwalow, S, Liu, Y, Vilkelis, K, Manesco, ALR, Krogstrup, P & Wimmer, M 2021, 'Electronic properties of InAs/EuS/Al hybrid nanowires', Physical Review B, vol. 104, no. 1, 014516. https://doi.org/10.1103/PhysRevB.104.014516

APA

Liu, C-X., Schuwalow, S., Liu, Y., Vilkelis, K., Manesco, A. L. R., Krogstrup, P., & Wimmer, M. (2021). Electronic properties of InAs/EuS/Al hybrid nanowires. Physical Review B, 104(1), [014516]. https://doi.org/10.1103/PhysRevB.104.014516

Vancouver

Liu C-X, Schuwalow S, Liu Y, Vilkelis K, Manesco ALR, Krogstrup P et al. Electronic properties of InAs/EuS/Al hybrid nanowires. Physical Review B. 2021 Jul 22;104(1). 014516. https://doi.org/10.1103/PhysRevB.104.014516

Author

Liu, Chun-Xiao ; Schuwalow, Sergej ; Liu, Yu ; Vilkelis, Kostas ; Manesco, A. L. R. ; Krogstrup, P. ; Wimmer, Michael. / Electronic properties of InAs/EuS/Al hybrid nanowires. In: Physical Review B. 2021 ; Vol. 104, No. 1.

Bibtex

@article{e617dff298724435a1a43ac11a9db57c,

title = "Electronic properties of InAs/EuS/Al hybrid nanowires",

abstract = "We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.",

keywords = "MAJORANA FERMIONS, SUPERCONDUCTOR",

author = "Chun-Xiao Liu and Sergej Schuwalow and Yu Liu and Kostas Vilkelis and Manesco, {A. L. R.} and P. Krogstrup and Michael Wimmer",

year = "2021",

month = jul,

day = "22",

doi = "10.1103/PhysRevB.104.014516",

language = "English",

volume = "104",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "1",

}

RIS

TY - JOUR

T1 - Electronic properties of InAs/EuS/Al hybrid nanowires

AU - Liu, Chun-Xiao

AU - Schuwalow, Sergej

AU - Liu, Yu

AU - Vilkelis, Kostas

AU - Manesco, A. L. R.

AU - Krogstrup, P.

AU - Wimmer, Michael

PY - 2021/7/22

Y1 - 2021/7/22

N2 - We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.

AB - We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.

KW - MAJORANA FERMIONS

KW - SUPERCONDUCTOR

U2 - 10.1103/PhysRevB.104.014516

DO - 10.1103/PhysRevB.104.014516

M3 - Journal article

VL - 104

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 1

M1 - 014516

ER -

ID: 275999413