Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

Research output: Contribution to journalJournal articleResearchpeer-review

Standard

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex. / Osorio, Edgar A; Moth-Poulsen, Kasper; van der Zant, Herre S J; Paaske, Jens; Hedegård, Per; Flensberg, Karsten; Bendix, Jesper; Bjørnholm, Thomas.

In: Nano Letters, Vol. 10, No. 1, 01.01.2010, p. 105-10.

Research output: Contribution to journalJournal articleResearchpeer-review

Harvard

Osorio, EA, Moth-Poulsen, K, van der Zant, HSJ, Paaske, J, Hedegård, P, Flensberg, K, Bendix, J & Bjørnholm, T 2010, 'Electrical manipulation of spin states in a single electrostatically gated transition-metal complex', Nano Letters, vol. 10, no. 1, pp. 105-10. https://doi.org/10.1021/nl9029785

APA

Osorio, E. A., Moth-Poulsen, K., van der Zant, H. S. J., Paaske, J., Hedegård, P., Flensberg, K., ... Bjørnholm, T. (2010). Electrical manipulation of spin states in a single electrostatically gated transition-metal complex. Nano Letters, 10(1), 105-10. https://doi.org/10.1021/nl9029785

Vancouver

Osorio EA, Moth-Poulsen K, van der Zant HSJ, Paaske J, Hedegård P, Flensberg K et al. Electrical manipulation of spin states in a single electrostatically gated transition-metal complex. Nano Letters. 2010 Jan 1;10(1):105-10. https://doi.org/10.1021/nl9029785

Author

Osorio, Edgar A ; Moth-Poulsen, Kasper ; van der Zant, Herre S J ; Paaske, Jens ; Hedegård, Per ; Flensberg, Karsten ; Bendix, Jesper ; Bjørnholm, Thomas. / Electrical manipulation of spin states in a single electrostatically gated transition-metal complex. In: Nano Letters. 2010 ; Vol. 10, No. 1. pp. 105-10.

Bibtex

@article{191bd8e3fb7f4136b423466e20af86ba,
title = "Electrical manipulation of spin states in a single electrostatically gated transition-metal complex",
abstract = "We demonstrate an electrically controlled high-spin (S = 5/2) to low-spin (S = 1/2) transition in a three-terminal device incorporating a single Mn(2+) ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.",
author = "Osorio, {Edgar A} and Kasper Moth-Poulsen and {van der Zant}, {Herre S J} and Jens Paaske and Per Hedeg{\aa}rd and Karsten Flensberg and Jesper Bendix and Thomas Bj{\o}rnholm",
year = "2010",
month = "1",
day = "1",
doi = "10.1021/nl9029785",
language = "English",
volume = "10",
pages = "105--10",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

AU - Osorio, Edgar A

AU - Moth-Poulsen, Kasper

AU - van der Zant, Herre S J

AU - Paaske, Jens

AU - Hedegård, Per

AU - Flensberg, Karsten

AU - Bendix, Jesper

AU - Bjørnholm, Thomas

PY - 2010/1/1

Y1 - 2010/1/1

N2 - We demonstrate an electrically controlled high-spin (S = 5/2) to low-spin (S = 1/2) transition in a three-terminal device incorporating a single Mn(2+) ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.

AB - We demonstrate an electrically controlled high-spin (S = 5/2) to low-spin (S = 1/2) transition in a three-terminal device incorporating a single Mn(2+) ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model.

U2 - 10.1021/nl9029785

DO - 10.1021/nl9029785

M3 - Journal article

C2 - 20000819

VL - 10

SP - 105

EP - 110

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 1

ER -

ID: 33697534