Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

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  • Liu, Yu
  • Alessandra Luchini
  • Sara Marti-Sanchez
  • Christian Koch
  • Sergej Schuwalow
  • Sabbir A. Khan
  • Tomas Stankevic
  • Sonia Francoual
  • Jose R. L. Mardegan
  • Jonas A. Krieger
  • Vladimir N. Strocov
  • Jochen Stahn
  • Carlos A. F. Vaz
  • Mahesh Ramakrishnan
  • Urs Staub
  • Lefmann, Kim
  • Gabriel Aeppli
  • Jordi Arbiol
  • Jeppesen, Peter Krogstrup

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.

Original languageEnglish
JournalA C S Applied Materials and Interfaces
Issue number7
Pages (from-to)8780-8787
Number of pages8
Publication statusPublished - 19 Feb 2020

    Research areas

  • quantum computing, proximity effects, MBE, hybrid materials, magnetic proximity, exchange field, band alignment, EUS, SUPERCONDUCTOR, DIFFRACTION, BEAMLINE, FIELD, POLARIZATION, PRINCIPLES, SCATTERING, ADRESS, GROWTH

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