Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy

Research output: Contribution to journalJournal articleResearchpeer-review

Udgivelsesdato: 2008
Original languageEnglish
JournalApplied Physics Letters
Volume92
Issue number1
Pages (from-to)012119
ISSN0003-6951
DOIs
Publication statusPublished - 2008

ID: 9513620