Peter Krogstrup Jeppesen

Peter Krogstrup Jeppesen

Professor


  1. 2013
  2. Published

    Low temperature transport in p-doped InAs nanowires. / Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal; Krogstrup, Peter; Nygård, Jesper.

    In: Applied Physics Letters, Vol. 103, No. 16, 162104, 01.10.2013, p. .

    Research output: Contribution to journalJournal articleResearchpeer-review

  3. Published

    Direct observation of interface and nanoscale compositional modulation in ternary III-As heterostructure nanowires. / Venkatesan, Sriram; Madsen, Morten Hannibal; Schmid, Herbert; Krogstrup, Peter; Johnson, Erik; Scheu, Christina.

    In: Applied Physics Letters, Vol. 103, No. 6, 063106, 08.08.2013.

    Research output: Contribution to journalJournal articleResearchpeer-review

  4. Published

    Advances in the theory of III–V nanowire growth dynamics. / Krogstrup, Peter; Jørgensen, Henrik Ingerslev; Johnson, Erik; Madsen, Morten Hannibal; Sørensen, Claus Birger; i Morral, A.F.; Aagesen, Martin; Nygård, Jesper; Glas, Frank.

    In: Journal of Physics D: Applied Physics, Vol. 46, No. 31, 313001, 12.07.2013.

    Research output: Contribution to journalJournal articleResearchpeer-review

  5. Published
  6. Published

    "Surface passivated GaAsP single nanoeire solar cells grown on silicon exceeding 10% efficiency" : 2013 MRS Spring Meeting & Exhibit, San Francisco, California. / Holm, Jeppe Vilstrup; Jørgensen, Henrik Ingerslev; Krogstrup, Peter; Nygård, Jesper; Liu, Huiyun; Aagesen, Martin.

    San Francisco, California,USA. 2013, Talk.

    Research output: Other contributionResearch

  7. Published

    Surface-passivated GaAsP single-nanowire solar cells exceeding 10% efficiency grown on silicon. / Holm, Jeppe Vilstrup; Jørgensen, Henrik Ingerslev; Krogstrup, Peter; Nygård, Jesper; Liu, Huiyun; Aagesen, Martin.

    In: Nature Communications, Vol. 4, 1498, 19.02.2013.

    Research output: Contribution to journalJournal articleResearchpeer-review

  8. Published

    Electrical contacts to single nanowires : a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction. / Blanc, Pierre; Hiess, Martin; Colombo, Carlo; Mallorqui, Anna Dalmau; Safaei, Tina S.; Krogstrup, Peter; Nygård, Jesper; Fontcuberta, AFI.

    In: International Journal of Nanotechnology, Vol. 10, No. 5-7, 01.01.2013, p. 419-432.

    Research output: Contribution to journalJournal articleResearchpeer-review

  9. Published

    Doping incorporation paths in catalyst-free Be-doped GaAs nanowires. / Casadei, Alberto; Krogstrup, Peter; Heiss, Martin; Röhr, Jason A.; Colombo, Carlo; Ruelle, Thibaud; Upadhyay, Shivendra; Sørensen, Claus Birger; Nygård, Jesper; Morral, Anna Fontcuberta i.

    In: Applied Physics Letters, Vol. 102, No. 1, 013117, 2013.

    Research output: Contribution to journalJournal articleResearchpeer-review

  10. Published

    Experimental determination of adatom diffusion lengths for growth of InAs nanowires. / Madsen, Morten Hannibal; Krogstrup, Peter; Johnson, Erik; Venkatesan, Sriam; Mühlbauer, Erika; Scheu, Christina; Sørensen, Claus Birger; Nygård, Jesper.

    In: Journal of Crystal Growth, Vol. 364, 2013, p. 16-22.

    Research output: Contribution to journalJournal articleResearchpeer-review

  11. Published

    Single-nanowire solar cells beyond the Shockley-Queisser limit. / Krogstrup, Peter; Jørgensen, Henrik Ingerslev; Heiss, Martin; Demichel, Oliver; Holm, Jeppe Vilstrup; Aagesen, Martin; Nygård, Jesper; Fontcuberta i Morral, Anna.

    In: Nature Photonics, Vol. 7, No. 4, 2013, p. 306-310.

    Research output: Contribution to journalJournal articleResearchpeer-review

ID: 15747704