Peter Krogstrup Jeppesen

Peter Krogstrup Jeppesen

Professor


  1. Published

    Raman spectroscopy and electrical properties of InAs nanowires with local oxidation enabled by substrate micro-trenches and laser irradiation. / Tanta, Rawa; Madsen, M. H.; Liao, Zhiyu; Krogstrup, Peter; Vosch, Tom André Jos; Nygård, Jesper; Jespersen, Thomas Sand.

    In: Applied Physics Letters, Vol. 107, No. 24, 243101, 14.12.2015.

    Research output: Contribution to journalJournal articleResearchpeer-review

  2. Published

    Morphology and composition of oxidized InAs nanowires studied by combined Raman spectroscopy and transmission electron microscopy. / Tanta, Rawa; Kanne, Thomas; Amaduzzi, Francesca; Liao, Zhiyu; Madsen, Morten H.; Alarcón-Lladó, Esther; Krogstrup, Peter; Johnson, Erik; Morral, Anna Fontcuberta i; Vosch, Tom André Jos; Nygård, Jesper; Jespersen, Thomas Sand.

    In: Nanotechnology, Vol. 27, No. 30, 305704, 2016.

    Research output: Contribution to journalJournal articleResearchpeer-review

  3. Published

    InAs nanowire with epitaxial aluminium as a single-electron transistor with fixed tunnel barriers. / Taupin, Mathieu; Mannila, Elsa; Krogstrup, Peter; Nguyen, Quoc Hung; Albrecht, Sven Marian; Nygård, Jesper; Marcus, Charles M.; Pekola, Jukka P.

    In: Physical Review Applied, Vol. 6, 054017, 28.11.2016.

    Research output: Contribution to journalJournal articleResearchpeer-review

  4. Published

    Three-Dimensional Multiple-Order Twinning of Self-Catalyzed GaAs Nanowires on Si Substrates. / Uccelli...[et al.], E.; Arbiol, J.; Magen, C.; Krogstrup, Peter; Nygård, Jesper.

    In: Nano Letters, Vol. 11, No. 9, 08.08.2011, p. 3827-3832.

    Research output: Contribution to journalJournal articleResearchpeer-review

  5. Published

    Towards low-dimensional hole systems in Be-doped GaAs nanowires. / Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup; Sørensen, Claus Birger; Nygård, Jesper; Micolich, A.P.

    In: Nanotechnology, Vol. 28, No. 13, 134005, 2017.

    Research output: Contribution to journalJournal articleResearchpeer-review

  6. Published

    p-GaAs Nanowire Metal-Semiconductor Field-Effect Transistors with Near-Thermal Limit Gating. / Ullah, A. R.; Meyer, F.; Gluschke, J. G.; Naureen, S.; Caroff, P.; Krogstrup, P.; Nygard, J.; Micolich, A. P.

    In: Nano Letters, Vol. 18, No. 9, 01.09.2018, p. 5673-5680.

    Research output: Contribution to journalJournal articleResearchpeer-review

  7. Published

    Near-thermal limit gating in heavily doped III-V semiconductor nanowires using polymer electrolytes. / Ullah, A. R.; Carrad, D. J.; Krogstrup, P.; Nygard, J.; Micolich, A. P.

    In: Physical Review Materials, Vol. 2, No. 2, 025601, 05.02.2018.

    Research output: Contribution to journalJournal articleResearchpeer-review

  8. Published

    Indium arsenide nanowire field-effect transistors for pH and biological sensing. / Upadhyay, Shivendra; Frederiksen, Rune Schøneberg; Lloret, Noemie Denise Carmen; De Vico, Luca; Krogstrup, Peter; Jensen, Jan Halborg; Martinez, Karen Laurence; Nygård, Jesper.

    In: Applied Physics Letters, Vol. 104, No. 20, 203504, 2014.

    Research output: Contribution to journalJournal articleResearchpeer-review

  9. Published

    Low temperature transport in p-doped InAs nanowires. / Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal; Krogstrup, Peter; Nygård, Jesper.

    In: Applied Physics Letters, Vol. 103, No. 16, 162104, 01.10.2013, p. .

    Research output: Contribution to journalJournal articleResearchpeer-review

  10. Published

    Effective g Factor of Subgap States in Hybrid Nanowires. / Vaitiekenas, S.; Deng, M-T; Nygard, Jesper; Krogstrup, P.; Marcus, C. M.

    In: Physical Review Letters, Vol. 121, No. 3, 037703, 20.07.2018.

    Research output: Contribution to journalJournal articleResearchpeer-review

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